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| Datasheet File OCR Text: |
| semiconductor 2N2906E za 2 0 1 1 3 2008. 9. 5 1/1 marking specification tes6 package revision no : 0 1. marking method laser marking 2. marking no. item marking description device mark za 2N2906E hfe grade - - * lot no. 01 2006. 1st week [0:1st character, 1:2nd character] pin no. dot pin 1 index. note) * lot no. marking method character arrangement 1 st character 1 (a) 2 (b) 3 (c) 4 (d) 5 (e) 6 (f) 7 (g) 8 (h) 9 (i) 0 (j) 2nd character a (1) b (2) c (3) d (4) e (5) f (6) g (7) h (8) i (9) j (0) year marking (week) periode (year) remark 1 st year (2006) 01 02 51 52 2006-2010-2014... rotation for 4 years 2 nd year (2007) 0a 0b 5a 5b 2007-2011-2015... 4 rd year (2008) j1 j2 e1 e2 2008-2012-2016... 4 th year (2009) ja jb ea eb 2009-2013-2017...
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